jiang su changjiang electronic s technology co., ltd to - 92 plastic - encapsulate transistors 3dd13001 transistor ? npn ? features power dissipation p cm : 1.25 w ? t amb=25 ??? collector current i cm : 0.2 a c ollector - base voltage v ( br ) cbo : 600 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? to +150 ?? electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min typ max unit collector - base breakdown voltage v(br) cbo i c = 100 | a ? i e =0 600 v c ollector - emitter brea kdown voltage v(br) ceo i c = 1 ma , i b =0 400 v emitter - base breakdown voltage v(br) e b o i e = 100 | a ? i c =0 7 v collector cut - off current i cbo v cb = 600 v , i e =0 100 | a collector cut - off current i ceo v ce = 400 v , i b =0 200 | a emitter cut - off curre nt i ebo v e b = 7 v , i c =0 100 | a h fe ? 1 ? v ce = 20 v , i c = 20m a 10 70 dc current gain h fe ? 2 ? v ce = 10 v, i c = 0.25 m a 5 collector - emitter saturation voltage v ce (sat) i c = 50ma , i b = 10 m a 0.5 v b ase - emitter saturation voltage v be (sat) i c = 50 m a, i b = 10m a 1.2 v transition frequency f t v ce = 20 v, i c =20ma f = 1mhz 8 mhz fall time t f 0.3 | s storage time t s i c =50ma, i b1 = - i b2 =5ma, v cc =45v 1.5 | s classification of h fe (1) range 10 - 15 15 - 20 20 - 25 25 - 30 30 - 35 35 - 40 40 - 45 45 - 50 50 - 5 5 55 - 60 60 - 65 65 - 70 1 2 3 to ?a 92 1.base 2.collector 3 .emitter
d b e a a1 c l d1 e e1 t o-92 p ackage outline dimensions symbol a a1 b c d d1 e e e1 l ? min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 2.440 14.100 0.000 max 3.700 1.400 0.550 0.510 4.700 4.700 2.640 14.500 1.600 0.380 min 0.130 0.043 0.015 0.014 0.173 0.135 0.169 0.096 0.555 0.000 max 0.146 0.055 0.022 0.020 0.185 0.185 0.104 0.571 0.063 0.015 dimensions in millimeters dimensions in inches 0.050typ 1.270typ |?
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